Rectifying charge storage memory circuit

ABSTRACT

A composite rectifying charge storage device, consisting of a rectifier and capacitor which share common elements, is provided in a memory circuit or memory cell. In one form, the memory cell is adapted for alternative operation as a random access memory (RAM) or as a read only memory (ROM).

This is a continuation-in-part of copending U.S. Ser. No. 10/155,518,filed May 24, 2002, and published as Publication No. US 2002/0140500 A1on Oct. 3, 2002, which in turn is a continuation of U.S. Ser. No.09/723,897, filed Nov. 28, 2000, and now issued as U.S. Pat. No.6,414,543 on Jul. 2, 2002.

BACKGROUND OF THE INVENTION

This invention relates generally to a composite rectifying chargestorage device of the type having a rectifier and capacitor which sharecommon elements, as described in U.S. Pat. No. 6,414,543 and U.S.Publication US 2002/0140500 A1, and related circuit applications forusing the composite device. More particularly, this invention relates tothe composite rectifying charge storage device incorporated in a memorycircuit or memory cell. In one preferred form, the memory cell isadapted for alternative operation as a random access memory (RAM), or asa read only memory (ROM).

U.S. Pat. No. 6,414,543 and U.S. Publication US 2002/0140500 A1, whichare incorporated by reference herein, disclose embodiments for acomposite rectifying charge storage element and related electroniccircuits suitable for fabrication on various substrates, includingflexible substrates, by various means including printing or otherdeposition techniques using organic conductors, semiconductors andinsulators and other electronic materials suitable for deposition anduse in electronic circuits. This rectifying charge storage element isdisclosed for use as a power supply that extracts DC power (voltage andcurrent) sufficient to power an electronic device from an AC inputsignal. The AC input signal may be derived from an inductive,capacitive, or L-C resonant circuit coupled to external ACelectromagnetic field or electrostatic AC field. The electronic circuitthus powered may comprise a radio frequency identification (RFID)circuit.

In this regard, most electronic circuits require a source of DC voltagewith sufficient current output to power the circuit elements. Many ofthese circuits derive DC power by rectifying and filtering an AC powerinput signal. Often, the AC signal is provided to the circuitry byelectromagnetic coupling. For example, a passive RFID tag system must becapable of receiving power from an RFID reader to the RFID tag via aninductive (H-field) or electric field (E-field) coupling, andtransmitting data from the tag to the reader also via inductive orelectric field coupling. The activation field frequency for typical RFIDdevices may range from less than about 100 kHz up to more than about 30MHz if inductive or capacitive coupling is utilized, and up to the UHFand microwave region if electric field RF antenna coupling is used. Incurrent industry practice, operating power to a passive RFID tag orother electronic circuit is derived by utilizing a rectifier device anda charge-storage device, typically a rectifier diode or combination ofdiodes connected to a charge storage capacitor or combination ofcapacitors. In the past, these elements have been implemented asseparate components within a discrete circuit or silicon integratedcircuit. See, for example, U.S. Pat. No. 4,333,072.

Recent advancements in circuitry manufacturing processes, applicable toRFID tag and similar electronic circuit systems, have enabled theproduction of electronic circuits on flexible substrates using thin filmmaterials such as organic and polymer semiconductors and othersubstances that can be applied by techniques such as ink jet printing. Aprimary objective is to produce electronic devices that have operatingcharacteristics similar to discrete or integrated silicon circuittechnology sufficient to operate certain types of circuits whileapproaching the economy of printing processes. See, for example, U.S.Pat. Nos. 5,973,598 and 6,087,196.

The rectifying charge storage device disclosed in the above-referencedU.S. Pat. No. 6,414,543 and U.S. Publication US 2002/0140500 A1incorporates a rectifier component such as a rectifying diode incombination with a charge storage component such as a capacitor, whereinthese components share one or more common elements resulting in acomposite device that is particularly suited for economical manufactureas by printing processes or the like. In addition, the composite devicein especially suited for support on a flexible substrate which maycomprise an integral portion of the device. Moreover, the supportingsubstrate may also comprise an electrically operative portion of thedevice. However, this rectifying charge storage device has alternativeuses in electronic circuitry other than as a power supply device.

SUMMARY OF THE INVENTION

In accordance with the invention, an improved composite rectifyingcharge storage device is provided of the type shown and described inU.S. Pat. No. 6,414,543 and U.S. Publication US 2002/0140500 A1, whereinthe composite device is incorporated into a memory circuit or memorycell for storing binary information or the like. In one form, thecomposite device is combined with a gate element such as a gatefield-effect transistor for alternative operation as a random accessmemory (RAM) or as a read only memory (ROM), thereby providingalternative volatile and nonvolatile memory capability in a singlecircuit arrangement. Use of the composite device in the memory circuitor cell beneficially results in a reduced or more compact circuitfootprint area.

The composite rectifying charge storage device includes a rectifier suchas a diode and a capacitor coupled to a common conductor. The capacitoris defined by the common conductor and a second conductor with adielectric material defining a dielectric gap therebetween. In one form,the common conductor may comprise the cathode or anode connection to thediode. In another form, the diode function is provided by asemiconductor material which also forms the dielectric material disposedbetween the capacitor conductors. In either configuration, the devicemay be formed as by ink jet printing or the like onto a substrate whichmay comprise a flexible substrate. The substrate may be provided as aseparate component having the rectifying charge storage device formed ormounted thereon. Alternately, the substrate can be formed integrallywith the rectifying charge storage device, for example, by integratingthe substrate with the dielectric material.

An array of composite devices are provided in a memory circuit or memorycell matrix including a plurality of individual memory cells eachseparately addressable by means of a corresponding intersecting array ofso-called word lines and bit lines. Each memory cell within the matrixincorporates a composite rectifying charge storage device coupledbetween the associated word and bit lines. An additional array ofso-called state lines may be connected to the composite devices forprogramming the state of the diode and/or capacitor components of thecomposite device within each memory cell.

In one preferred form for alternative operation as a random accessmemory (RAM) or a read only memory (ROM) circuit, the compositerectifying charge storage device within each memory cell of the memorymatrix is connected with the second conductor of the capacitor componentcoupled to a gate transistor. The opposite, common conductor of thecapacitor component is coupled through the diode component in areverse-bias orientation to a suitable ground point. A RAM enabletransistor provides a bypass connection for coupling the commonconductor to a suitable ground point in bypass relation to the diodecomponent.

In a random access memory (RAM) mode of operation, the RAM enabletransistor is switched to a conductive state for coupling the commonconductor of the capacitor component to the ground point, therebybypassing the diode component of the composite device. In this mode, thegate transistor can also be switched to a conductive state upon inputthereto of an appropriate gate signal on the associated word line of thememory matrix, thereby coupling the second conductor of the capacitorcomponent to an input signal on the corresponding bit line for resultantstorage of a charge representing a “1” in binary code. Conversely, inthe absence of an input signal on the associated bit line, no charge isstored thereby representing a “0” in binary code. The presence orabsence of such stored charge can be monitored by means of standard bitline sensing devices, and repeatedly refreshed as appropriate.

In a read only memory (ROM) mode of operation, the diode component isrendered conductive or nonconductive by the application of a suitablesignal of sufficient voltage, current, frequency, or by other suitablemeans, thereby breaking the diode component to configure the memorycircuit or cell for representing a “1” or “0” in binary code. Uponsubsequent switching of the gate transistor to a conductive state,standard bit line sensing devices will determine alternative states inaccordance with the conductive or nonconductive state of the diodecomponent, and thereby provide an indication of a “1 ” or “0” in binarycode. During such bit line sensing, the RAM enable transistor ismaintained in a nonconductive state.

In a further preferred form of the invention, the composite rectifyingcharge storage device may incorporate the RAM enable transistor as anintegrated component, thereby resulting in a further reduced and morecompact circuit footprint area.

Other features and advantage of the present invention will become moreapparent from the following detailed description, taken in conjunctionwith the accompanying drawings which illustrate, by way of example, theprinciples of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings illustrate the invention. In such drawings:

FIG. 1 is a somewhat schematic perspective view illustrating a compositerectifying charge storage device for use in the invention;

FIG. 2 is a circuit diagram illustrating the composite device of FIG. 1in one form;

FIG. 3 is a circuit diagram illustrating the composite device of FIG. 1in an alternative form;

FIG. 4 is a 2-dimensional matrix cell diagram illustrating use of thecomposite device in an array or matrix of memory cells, in accordancewith one preferred form of the invention;

FIG. 5 is a 2-dimensional matrix cell diagram similar to FIG. 4, butdepicting the composite device in accordance with an alternativepreferred form of the invention;

FIG. 6 is another 3-dimensional matrix cell diagram similar to FIG. 4,but showing still another alternative preferred form of the invention;

FIG. 7 is a 3-dimensional matrix cell diagram similar to FIG. 6, andillustrating the composite device in accordance is a modified preferredarrangement;

FIG. 8 is another 3-dimensional matrix cell diagram similar to FIG. 6,and showing an alternative embodiment of the invention;

FIG. 9 is a further 3-dimensional matrix cell diagram similar to FIG. 6,and depicting the composite device in accordance with a furtheralternative preferred form of the invention;

FIG. 10 is a schematic circuit diagram illustrating use of the compositedevice in a memory circuit or cell;

FIG. 11 is a schematic circuit diagram similar to FIG. 10, but depictingan alternative preferred form of the invention with the composite devicefurther incorporating an integrated RAM enable transistor;

FIG. 12 is a fragmented sectional view showing the composite device withintegrated RAM enable transistor of FIG. 11;

FIG. 13 is a schematic circuit diagram similar to FIG. 11, but showinganother alternative preferred form of the invention with the compositedevice incorporating integrated RAM enable and gate transistors; and

FIG. 14 is a fragmented sectional view showing the composite device withintegrated RAM enable and gate transistors.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

As shown in the exemplary drawings, an improved composite rectifyingcharge storage device referred to generally in FIGS. 1-10 by thereference numeral 10 provided for use in a memory circuit or cell 50(FIG. 4) for storing binary information or the like within a memorymatrix including a large plurality of memory cells. The multiple memorycells are individually defined and separately addressable by means of anintersecting array of so-called word lines 56 and bit lines 58, with thecomposite device 10 within each memory cell 50 coupled between theassociated word and bit lines 56, 58. In one preferred form, thecomposite device 10 is combined with a gate element such as a gatetransistor 52 for combined or alternative operation as a random accessmemory (RAM) and/or as a read only memory (ROM), thereby providing bothvolatile and nonvolatile memory capability in a single circuitarrangement. Use of the composite device 10 in the memory circuit orcell 50 beneficially results in a reduced or more compact circuitfootprint area.

The improved rectifying charge storage device 10 corresponds generallywith the device shown and described in parent U.S. Pat. No. 6,414,543and in copending U.S. Publication US 2002/0140500 A1, both of which areincorporated by reference herein. In this regard, as viewed in FIG. 1with respect to one preferred form for use in a power supplyapplication, the illustrative rectifying charge storage device 10generally includes a diode rectifier 12 and a capacitor 14 which sharecommon elements. The diode 12 includes a conductor 16 and asemiconductor 18. A common conductor 20 between the diode 12 andcapacitor 14 is superimposed on a dielectric component 22 of thecapacitor 14 which, in turn, is mounted on a second or ground conductor24.

The conductor 16 is electrically connected to one terminal 30 of asuitable electrical signal source 32, and is electrically connected toone surface of the semiconductor 18 at a surface interface 34. Theopposite surface of the semiconductor 18 is electrically connected tothe common conductor 20 at a surface interface 36. The common conductor20 is connected to the dielectric component 22 at a surface interface38, and the conductor 24 is connected to the dielectric component 22 ata surface interface 42. The conductor 24 is connected to a secondterminal 46 of the electrical signal source 32 and also serves as theground output terminal 48.

Rectification takes place between the conductor 16, the semiconductor18, and the common conductor 20 through the interfaces 34 and 36. Chargestorage takes place across the capacitor 14, between the capacitorplates defined by the common conductor 20 and the second conductor 24with the dielectric component 22 disposed therebetween. The surface areaof the rectifying component and 16, 34, 18, 36, and 20 interfaces may beminimized to reduce internal parasitic capacitor characteristicsinherent in rectification. The surface area of the capacitive componentinterface provided by the common conductor 20 may be maximized toincrease DC charge storage capacity. In this illustrative power supplyapplication, the common conductor 20 provides the DC power output at ajunction 26.

The diode component may be fabricated from various materials, includinginorganic semiconductor nanocrystals such as CdSe, InP, and others.Furthermore, conjugated polymers may be used, such aspoly(phenylene-vinylene) (PPV), its derivatives and co-polymers (such asMEH-PPV (poly(2-methoxy, 5-(2′-ethyl-hexoxy)-ρ-phenylene vinylene)));polyfluorene (PF), its derivatives and co-polymers; polyparaphenylene(PPP), its derivatives and co-polymers; polythiophene (PT), itsderivatives and co-polymers; and others.

The rectifying function of the diode 12 is implemented through theconductor 16 which serves as the anode and the common conductor 20 whichserves as the cathode. The rectifying character of an organic or apolymeric diode usually requires different conductors with differentwork functions for the anode and for the cathode. Organic and polymericsemiconductors are usually regarded as semiconductors with low dopingconcentration (usually in the range of ˜10¹³ cm⁻³), hence the theory ofp-n junction commonly used inorganic semiconductor diodes is notapplicable here.

For inorganic diodes, metal electrodes for the anode and cathode can bethe same material with ohmic contacts to the p-type and n-typesemiconductor, respectively. The rectifying behavior is from the p-njunction.

For organic semiconductors, the relative position of the work functions(or the energy level) of the metal electrodes to the energy levels ofthe conduction band and valence band of the organic semiconductordetermines the rectifying behavior. The choice of anode hence ispreferentially to be high work function metals such as gold, nickel, andtheir alloys. Alternatively, some metal oxides, including but notlimited to indium tin-oxide, indium oxide, are also candidates for theanode material. For the cathode, the choice is preferentially low workfunction metals, including but not limited to calcium, lithium,magnesium, and others. Recently, the metal alloys consisting of a smallamount of low work function metals, such as aluminum:lithium 3% alloyand 97% Al:LiF bilayer electrode, have become alternatives for thechoice of cathode material.

In the case where the conductor 16 is formed from a relatively high workfunction metal such as a thin layer of aluminum or gold, a layer of lowwork function material is used for the common conductor 20. In thisconfiguration, the conductor 16 comprises the anode connection to thesemiconductor or diode component 18, with the common conductor 20comprising the cathode connection to yield a composite device 10 havingan electrical schematic as viewed in FIG. 2. Conversely, when theconductor 16 is formed from a low work function material, the commonconductor 20 should be formed from a comparatively high work functionmetal such as aluminum or gold. In this latter configuration, the commonconductor 20 comprises the anode connection for the semiconductor 18,and conductor 16 comprises the cathode connection, resulting in acomposite device having an electrical schematic as viewed in FIG. 3.

Alternative organic semiconductors, referred to as high performanceorganic semiconductor devices, are shown and described in copending U.S.Ser. No. 10/218,141, filed Aug. 12, 2002, and incorporated by referenceherein.

The materials for the capacitor dielectric 22 should be insulatingmaterials, preferentially with a high dielectric constant to enhance itscapacity. The structure of the capacitor 14 should provide a larger areacompared to the diode. The dielectric 22 may be an organic or polymericor inorganic insulator with reasonable dielectric constant. It should belarge enough to hold enough charge, and it should also be small enoughsuch that the device 10 has a fast response time. Currently, polymermaterials such as polystyrene, polyethylene, and polycarbonate are idealcandidates. The dielectric 22 should be flexible where the othercomponents of the device 10 are flexible.

In alternative configurations as shown and described in more detail inparent U.S. Pat. No. 6,414,543 and in copending U.S. Publication US2002/0140500 A1, the composite device 10 may be mounted onto a suitablesubstrate (not shown in FIG. 1) which may comprise a flexible substrate.Or, if desired, the substrate which may be flexible can be formed by aportion of the composite device 10, such as by incorporating thesubstrate directly into the dielectric component 22. Alternatively, oradditionally, the dielectric component 22 may be defined by acombination semiconductor and dielectric layer for performing the dualfunctions of rectification and insulation between the capacitor plates.Any or all of these features may be incorporated into a planar array,and may further include capacitor plates having an interdigitatedconfiguration.

In accordance with the present invention, and as viewed in FIG. 4 withrespect to one preferred form, the composite rectifying charge storagedevice 10 is used in the memory circuit or cell 50 of a memory matrixfor storing binary information. In general, each composite device 10including the diode component 12 and associated capacitor component 14is connected between the corresponding word line 56 and bit line 58.FIG. 4 shows the conductor 16 at the anode side of the diode component12 coupled to the word line 56, and second conductor 24 of the capacitorcomponent 14 coupled to the bit line 58. FIG. 5 shows a similararrangement but wherein the conductor 16 at the anode side of the diodecomponent is coupled to the bit line 58, and the second conductor 24 ofthe capacitor component is coupled to the word line 56. Persons skilledin the art will recognize that the polarity of the diode component 12 asshown in FIGS. 4-5 may be reversed.

FIGS. 6-9 illustrate further alternative arrangements incorporating aplurality of the composite rectifying charge storage devices 10 into amemory matrix including a plurality of memory cells 50. In eacharrangement, the composite device 10 within each memory cell 50 iscoupled between the associated word line 56 and bit line 58. FIG. 6depicts an arrangement similar to FIG. 4, but wherein a each column ofmemory cells 50 is further associated with a corresponding state line100 for programming the composite devices 10 within that column. FIG. 6shows the state line 100 coupled to the common conductor 20 of eachcomposite device 10, wherein the state line 100 provides an input signalwhich may be used, for example, for controlling the conductive ornonconductive state of the diode component 12 or the change or operatingcondition of the capacitor component 10. FIG. 7 shows a similararrangement but wherein the state lines 100 are each coupled to adiagonal line of memory cells 50. In FIG. 8, another similar arrangementis depicted, but wherein the state lines are connected to rows of thememory cells 50 by connection to the second conductor 24 of eachcapacitor component 14, with the common conductor 20 connected to theassociated bit line 58. A further variation is illustrated in FIG. 9,with the common conductor 20 of each composite device 10 coupled to theassociated bit line 58. In this configuration as shown, the secondconductor 24 of each composite device 10 is coupled to a suitable groundpoint.

It will be appreciated that the arrangements depicted in FIGS. 6-10 areillustrative, and that a variety of further variations such as reversedorientation of the device 10 or polarity reversal of the diode component12 thereof may be used.

In one preferred form of the invention as viewed in FIG. 10, thecomposite device 10 is combined with a gate element such as a gatetransistor 52 for alternative operation as a random access memory (RAM)or as a read only memory (ROM), thereby providing alternative volatileand nonvolatile memory capability in a single circuit arrangement. Moreparticularly, as shown, the composite device 10 including the capacitorcomponent 14 and diode component 12 is combined with a conventional gateelement such as the gate transistor 52 responsive to a gate signal onthe word line 56 for coupling the composite device with the bit line 58of the memory matrix. A second gate element referred to in FIG. 10 as aRAM enable transistor 60 is also provided for setting the memory circuitor cell 50 in a random access memory (RAM) mode or alternately in a readonly memory (ROM) mode. Accordingly, the circuit arrangement providesboth RAM and ROM capability for respective volatile and nonvolatilememory storage in a single device. In the ROM mode, nonvolatile memorystorage can be reversible or irreversible.

More particularly, with reference to the illustrative embodiment shownin FIG. 10, the composite device 10 is connected in the memory circuitor cell 50 of the memory matrix with the second conductor 24 of thecapacitor component 14 coupled to the gate transistor 52. Specifically,this second conductor or electrode 24 is coupled via the source anddrain junctions of the gate transistor 52 to the matrix bit line 58,upon input of a logical high or gate signal from the matrix word line 56to the gate junction of the gate transistor 52. The opposite, commonconductor 20 or electrode of the capacitor component 14 is coupledthrough the diode component 12 oriented in a reverse-bias configurationto a suitable ground point. The common conductor 20 is also coupled to asuitable ground point via a bypass path 62 including the RAM enabletransistor 60. Specifically, the common conductor 20 is coupled via thebypass path 62 through the source and drain junctions of the RAM enabletransistor 60 to the ground point, upon input of a logical high or gatesignal to the gate junction of the RAM enable transistor 60.

In a random access memory (RAM) mode of operation, the RAM enabletransistor 60 is switched from a normal nonconductive state to an activeor conductive state for coupling the common conductor 20 of thecapacitor component 14 to the ground point, thereby bypassing the diodecomponent 12 of the composite device 10. In this mode, the gatetransistor 52 can also be switched from a normal nonconductive state toa conductive state upon input thereto of the appropriate gate signal onthe associated word line 56 of the memory matrix, thereby coupling thesecond conductor 24 of the capacitor component 14 to an input signalfrom the corresponding bit line 58 of the memory matrix. As a result, acharge which may represent a “1” in binary code is stored by thecapacitor component 14. Conversely, in the absence of an input signal onthe associated bit line 58, no charge is stored by the capacitorcomponent 14 wherein this absence of stored charge may represent a “0”in binary code. The presence or absence of such stored charge can bemonitored by means of standard bit line sensing devices, and repeatedlyrefreshed as appropriate.

In a read only memory (ROM) mode of operation, the diode component 12 isrendered conductive or nonconductive by the application of a suitablesignal of sufficient voltage, current, frequency, or by other suitablemeans, thereby breaking the diode component to configure the memorycircuit or cell for representing a “1” or “0” in binary code. Uponsubsequent switching of the gate transistor 52 to a conductive state,standard bit line sensing devices will determine the alternative statesof the memory cell 50 in accordance with the conductive or nonconductivestate of the diode component 12, and thereby provide an indication of a“1” or “0” in binary code. During such bit line sensing, the RAM enabletransistor 60 is normally maintained in a nonconductive state.

More particularly, with continued reference to FIG. 10, the diodecomponent 12 can be switched or broken to a nonvolatile state, such asan open circuit condition or a closed circuit condition, in accordancewith the bit line sensing technique to be described in more detail.Breaking of the diode component 12 occurs by connecting a suitable setsignal thereto, wherein this set signal may be represented by aparticular voltage, current, frequency, or other suitable means.Breaking of the diode component 12 may be irreversible and thuspermanent, or it can be reversible thereby permitting periodicreprogramming of the memory circuit 50. One exemplary reversible diodecomponent comprises a reversible device such as an organic bistabledevice of the type shown and described in Organic Bistable LightEmitting Devices, Ma et al, Applied Physics Letters, Vol. 80, No. 5, pp.362-364, 2002, and Organic Electrical Bistable Devices and RewritableMemory Cells, L. Ma et al, Applied Physics Letters, Vol. 80, No. 6, pp.2997-2999, 2002, both of which are incorporated by reference herein. Seealso PCT Publication No. WO 02/37500 A1, which is also incorporated byreference herein.

In accordance with one bit line sensing method, the diode component 12is broken as described to provide an open circuit or nonconductivestate. With the RAM enable transistor 60 also in a nonconductive state,the bit line sensing apparatus will not detect current flow through theopen circuit diode component 12 in response to activation of the gatetransistor 52 by the appropriate gate signal on the word line 56. Thisabsence of current flow may represent a “0” in binary code. Conversely,in the absence of breaking the diode component 12, current will flowtherethrough upon activation of the gate transistor 52. Specifically,the current flow through the unbroken diode component 12 will force thebit line 58 negative (in the illustrative example) relative to theground point, wherein this condition is detected by the bit line sensingapparatus and may represent a “1” in binary code.

In an alternative ROM configuration, the RAM enable transistor 60associated with each memory circuit or cell 50 in the memory matrix maybe activated to cause the associated capacitor component 14 to store acharge representative, for example, of a “1” in binary code. Thereafter,the RAM enable transistor 60 is deactivated. The bit line sensingapparatus can then be configured to detect the broken or unbroken stateof the diode component 12. More particularly, an unbroken diodecomponent 12 will be forward-biased by the stored charge and willconduct current which can be monitored and detected by the bit linesensing apparatus. Conversely, in this case a broken diode in opencircuit mode will not conduct current. A cell 50 having an unbroken orfunctioning diode component 12 will produce a larger charge pulse incomparison with a cell having a broken or open circuit diode component,whereby these states may respectively represent a “1” and a “0” inbinary code.

Alternately, the broken diode component 12 may be set in a closedcircuit state. The bit line sensing apparatus can again distinguishbetween a circuit having a broken versus an unbroken diode component,for correspondingly distinguishing between alternative statesrepresenting a “1” and a “0” in binary code.

FIG. 11 depicts an alternative preferred embodiment of the invention,corresponding functionally to the embodiment shown and described hereinwith respect to FIG. 10, but wherein the composite device 10 furtherincorporates the RAM enable transistor 60 as an integrated element. Inthis regard, for convenience and brevity of description, functionalcomponents depicted in FIG. 11 which conform to those shown anddescribed in FIG. 10 are identified by common reference numerals. Inthis embodiment, the common conductor 20 of the composite device 10 isalso shared by the drain terminal of the RAM enable transistor 60,whereby the bypass path or conductor 62 shown in FIG. 10 connectedbetween the common conductor 20 and the RAM enable transistor 60 iseliminated. This configuration, shown schematically in FIG. 12,beneficially provides a further reduction in the footprint area of thememory circuit 50.

More particularly, as viewed in FIG. 12, the composite device 10includes the dielectric component 22 which may be flexible and functionfurther as a substrate for the device. The conductors 24 and 20 areformed on opposite sides of the dielectric 22, and cooperate therewithto define the capacitor component 14. The common conductor 20 iselectrically connected to a semiconductor 18 of suitable organic orpolymer material, which is electrically connected in turn with an inputconductor 16 also carried by the dielectric 22 to form the diodecomponent 12 of the composite device. The materials used to form theinput conductor 16 and the common conductor 20 will normally exhibitdifferent work functions.

The RAM enable transistor 60 is also carried by the dielectric 22, toinclude a composite drain terminal integrated with the common conductor20. An organic semiconductor 70 is electrically connected to the commonconductor 20 and acts as a channel region for the transistor fortransfer of electrons between the drain terminal/common conductor 20 anda source terminal 72 of the same work function material. A gate terminal74 for the transistor 60 is carried by the dielectric 22 in oppositionto the transistor semiconductor 70.

In this arrangement as viewed in FIG. 12, the source terminal 72, thegate terminal 74, the capacitor electrode 24, and the common electrode20 connect to external devices. The transistor structure corresponds tothat shown and described in U.S. Pat. No. 6,278,127, which isincorporated by reference herein.

FIGS. 13-14 illustrate a further variation similar to FIGS. 11-12, butwherein the composite device 10 incorporates both the RAM enabletransistor 60 and the gate transistor 52 as common elements. In thisconfiguration as shown schematically in FIG. 14, the combination of thecomposite device 10 and RAM enable transistor 60 may correspond to theconfiguration shown in FIG. 12, but wherein the second conductor 24 isextended at one side of the dielectric material 22 for electricalconnection to the gate transistor 52. As shown, the gate transistor 52comprises a gate terminal 80 carried by the dielectric material inopposition to an organic semiconductor 82 which is associated with thesecond conductor 24 and acts as a channel region for the transistor 52for transfer of electrons between a drain terminal shared by theconductor 24 and a source terminal 84 of the same work functionmaterial. In this configuration, the overall footprint defined by thememory circuit is further reduced.

A variety of further modifications and improvements in and to thecomposite rectifying charge storage device connected in a circuit withan antenna will be apparent to persons skilled in the art. By way ofexample, it will be recognized and understood that the composite device10 illustrated in FIG. 1, for use in the memory circuit 50, may beconstructed in accordance with any one of the embodiments shown anddescribed in the above-referenced parent U.S. Pat. No. 6,414,543 andcopending U.S. Publication US 2002/0140500 A1.

1. A memory circuit, comprising; at least one memory cell including aword line and a bit line; and a composite rectifying charge storagedevice within said memory cell and coupled between said word line andsaid bit line; said composite rectifying charge storage devicecomprising a rectifier component fabricated with a common conductorforming a side of the rectifier component, and a capacitor componentfabricated as a single unitary structure with the rectifier componentsuch that the capacitor component incorporates the common conductor ofthe rectifier component as a side of the capacitor component, thecapacitor component to receive rectified current from the rectifiercomponent over the common conductor.
 2. The memory circuit of claim 1,wherein said at least one memory cell comprises a matrix of memory cellseach coupled to a respective pair of word and bit lines and each havinga composite rectifying charge storage device therein.
 3. The memorycircuit of claim 1, wherein said rectifier component is coupled to saidword line and said capacitor component is coupled to said bit line. 4.The memory circuit of claim 1, wherein said rectifier component iscoupled to said bit line and said capacitor component is coupled to saidword line.
 5. The memory circuit of claim 1, wherein said rectifiercomponent comprises a diode component.
 6. The memory circuit of claim 5,wherein said diode component is forward-bias oriented relative to saidcapacitor component.
 7. The memory circuit of claim 5, wherein saiddiode component is reverse-bias oriented relative to said capacitorcomponent.
 8. The memory circuit of claim 5, wherein said at least onememory cell further includes a state line for programming said diodecomponent in a selected one of substantially conductive andsubstantially nonconductive states.
 9. The memory circuit of claim 1,wherein said capacitor component comprises said common conductor, asecond conductor, and a dielectric material disposed therebetween. 10.The memory circuit of claim 9, wherein said common conductor is coupledto one of said word line and said bit line, and said second conductor iscoupled to ground.
 11. The memory circuit of claim 9, wherein said atleast one memory cell further includes a state line coupled to one ofsaid common conductor and said second conductor.
 12. The memory circuitof claim 1, further including a gate element coupled between saidcomposite rectifying charge storage device and said word line.
 13. Thememory circuit of claim 12, wherein said gate element comprises a gatetransistor.
 14. The memory circuit of claim 12, wherein said gateelement comprises a field effect transistor.
 15. The memory circuit ofclaim 1, further including a gate transistor having a gate junctioncoupled to said word line, and source and drain junctions coupledbetween said bit line and said composite rectifying charge storagedevice.
 16. The memory circuit of claim 15, wherein said capacitorcomponent comprises said common conductor, a second conductor, and adielectric material disposed therebetween, said source and drainjunctions of said gate transistor being coupled between said bit lineand said second conductor, said rectifier component being coupled toground.
 17. The memory circuit of claim 1, further including a gateelement coupled between said composite rectifying charge storage deviceand said word line, and a RAM enable element coupled to said compositerectifying charge storage device for selectively setting said rectifiercomponent in a selected one of substantially conductive andsubstantially nonconductive states.
 18. The memory circuit of claim 17,wherein said gate element comprises a gate transistor, and wherein saidRAM enable element comprises a RAM enable transistor.
 19. The memorycircuit of claim 17, wherein said rectifier component comprises anirreversible state diode component.
 20. The memory circuit of claim 17,wherein said rectifier component comprises a reversible state diodecomponent.
 21. The memory circuit of claim 1, wherein said rectifier andcapacitor components are carried on a common substrate.
 22. The memorycircuit of claim 21, wherein said common substrate is a flexiblesubstrate.
 23. The memory circuit of claim 21, wherein said capacitorstructure incorporates said common substrate.
 24. The memory circuit ofclaim 1, further including a gate transistor fabricated as a singleunitary structure with said composite rectifying charge storage device.25. The memory circuit of claim 24, further including a RAM enabletransistor fabricated as a single unitary structure with said compositerectifying charge storage device and said gate transistor.
 26. Thememory circuit of claim 1, further including a RAM enable transistorfabricated as a single unitary structure with said composite rectifyingcharge storage device.
 27. A memory circuit, comprising: at least onememory cell including a word line and a bit line; a rectifier component;a common conductor connected to one side of said rectifier; and acapacitor component incorporating said common conductor; said rectifierand capacitor components being coupled between said word line and saidbit line; said rectifier component, common conductor and capacitorcomponent comprising a unitary element.
 28. The memory circuit of claim27, wherein said at least one memory cell comprises a matrix of memorycells each coupled to a respective pair of word and bit lines.
 29. Thememory circuit of claim 27, wherein said rectifier component is coupledto one of said word line and said bit line, and wherein said capacitorcomponent is coupled to the other of said word line and said bit line.30. The memory circuit of claim 27, wherein said rectifier componentcomprises a diode component.
 31. The memory circuit of claim 30, whereinsaid diode component is forward-bias oriented relative to said capacitorcomponent.
 32. The memory circuit of claim 30, wherein said diodecomponent is reverse-bias oriented relative to said capacitor component.33. The memory circuit of claim 30, wherein said at least one memorycell further includes a state line for programming said diode componentin a selected one of substantially conductive and substantiallynonconductive states.
 34. The memory circuit of claim 27, wherein saidcapacitor component comprises said common conductor, a second conductor,and a dielectric material disposed therebetween.
 35. The memory circuitof claim 34, wherein said common conductor is coupled to one of saidword line and said bit line, and said second conductor is coupled toground.
 36. The memory circuit of claim 34, wherein said at least onememory cell further includes a state line coupled to one of said commonconductor and said second conductor.
 37. The memory circuit of claim 27,further including a gate element coupled between one of said rectifierand capacitor components and said word line.
 38. The memory circuit ofclaim 27, further including a gate transistor having a gate junctioncoupled to said word line, and source and drain junctions coupledbetween said bit line and one of said rectifier and capacitorcomponents.
 39. The memory circuit of claim 38, wherein said capacitorcomponent comprises said common conductor, a second conductor, and adielectric material disposed therebetween, said source and drainjunctions of said gate transistor being coupled between said bit lineand said second conductor, said rectifier component being coupled toground.
 40. The memory circuit of claim 38, further including a RAMenable transistor coupled to said rectifier component for selectivelysetting said rectifier component in a selected one of substantiallyconductive and substantially nonconductive states.
 41. The memorycircuit of claim 40, wherein said rectifier component comprises anirreversible state diode component.
 42. The memory circuit of claim 40,wherein said rectifier component comprises a reversible state diodecomponent.
 43. The memory circuit of claim 27, wherein said rectifierand capacitor components are carried on a common substrate.
 44. Thememory circuit of claim 43, wherein said common substrate is a flexiblesubstrate.
 45. The memory circuit of claim 43, wherein said capacitorstructure incorporates said common substrate.
 46. The memory circuit ofclaim 27, further including a gate transistor; said rectifier component,common conductor, capacitor component and gate transistor comprising aunitary element.
 47. The memory circuit of claim 27, further including aRAM enable transistor; said rectifier component, common conductor,capacitor component, gate transistor and RAM enable transistorcomprising a unitary element.
 48. The memory circuit of claim 27,further including a RAM enable transistor; said rectifier component,common conductor, capacitor component and RAM enable transistorcomprising a unitary element.
 49. A memory circuit, comprising: at leastone memory cell including a word line and a bit line; a rectifiercomponent; a common conductor connected to one side of said rectifier; acapacitor component incorporating said common conductor; and a gatetransistor coupled between one of said rectifier and capacitorcomponents and said word line; said rectifier component, commonconductor, capacitor component and gate transistor comprising a unitaryelement.
 50. The memory circuit of claim 49, further including a RAMenable transistor coupled to said rectifier component for selectivelysetting said rectifier component in a selected one of substantiallyconductive and substantially nonconductive states; said rectifiercomponent, common conductor, capacitor component, gate transistor andRAM enable transistor comprising a unitary element.
 51. A memorycircuit, comprising: at least one memory cell including a word line anda bit line; a rectifier component; a common conductor connected to oneside of said rectifier; a capacitor component incorporating said commonconductor; said rectifier and capacitor components being coupled betweensaid word line and said bit line; and a RAM enable transistor coupled tosaid rectifier component for selectively setting said rectifiercomponent in a selected one of substantially conductive andsubstantially nonconductive states; said rectifier component, commonconductor, capacitor component and said RAM enable transistor comprisinga unitary element.
 52. A memory circuit, comprising; a matrix of memorycells each coupled to and separately addressable by a corresponding oneof a plurality of word lines and a corresponding one of a plurality ofbit lines; and a plurality of composite rectifying charge storagedevices each disposed within a respective one of said memory cells andcoupled between the word line and bit line associated with said one ofsaid memory cells; each of said composite rectifying charge storagedevices comprising a rectifier component fabricated with a commonconductor forming a side of the rectifier component, and a capacitorcomponent fabricated as a single unitary structure with the rectifiercomponent such that the capacitor component incorporates the commonconductor of the rectifier component as a side of the capacitorcomponent, the capacitor component to receive rectified current from therectifier component over the common conductor.
 53. The memory circuit ofclaim 52, wherein each of said memory cells further includes a gateelement coupled between said composite rectifying charge storage deviceand said word line, and a RAM enable element coupled to said compositerectifying charge storage device for selectively setting said rectifiercomponent in a selected one of substantially conductive andsubstantially nonconductive states.
 54. The memory circuit of claim 53,wherein said gate element comprises a gate transistor, and wherein saidRAM enable element comprises a RAM enable transistor.
 55. The memorycircuit of claim 53, wherein said rectifier component comprises anirreversible state diode component.
 56. The memory circuit of claim 53,wherein said rectifier component comprises a reversible state diodecomponent.
 57. The memory circuit of claim 54, wherein said gatetransistor of each of said memory cells is fabricated as a singleunitary structure with the associated composite rectifying chargestorage device.
 58. The memory circuit of claim 57, further wherein theRAM enable transistor of each of said memory cells is fabricated as asingle unitary structure with the associated composite rectifying chargestorage device.